Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field- effect transistors

نویسندگان

  • Maxim A. Stolyarov
  • Guanxiong Liu
  • Sergey L. Rumyantsev
  • Michael Shur
  • Alexander A. Balandin
چکیده

Articles you may be interested in Microscopic origin of low frequency noise in MoS2 field-effect transistors Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Appl. 1 ∕ f noise in Ga N ∕ Al Ga N heterostructure field-effect transistors in high magnetic fields at 300 K

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تاریخ انتشار 2015